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诚招PhD, 要求:雅思6.5(单科不低于6分),有力学物理化学或者计算材料背景,第一作者发表SCI为佳。昆士兰科技大学提供奖学金2.6w AUD每年。有意者请联系liangzhi.kou@qut.edu.au或者微信:kouliangzhi。
新一轮奖学金申请即将开始,有意者请速联系
非常欢迎申请CSC来我们组。
寇老师主要利用量化软件(VASP,SIESTA)从事第一原理模拟,研究兴趣包括低维纳米材料的力电磁耦合,能源材料,拓扑绝缘体。
发表文章
已在物理,化学材料领域国际顶尖杂志发表64篇文章(两篇J. Phys. Chem. Lett.邀请综述),引用1640次,其中包括Nano Lett, ACS Nano; Adv. Mater.; NPG Asia Mater. J. Phys. Chem. Lett; 等
代表作:
1. C. Jin, Y. Dai, L. Kou, A Janus MoSSe monolayer: a superior and strain-sensitive gas sensing material, J. Mater. Chem. A, 7, 1099, 2019.
2. X Tang, A Du, L. Kou, Gas sensing and capturing based on two‐dimensional layered materials: Overview from theoretical perspective, WIREs: Comp. Mol. Sci., DOI: 10.1002/wcms.1361, 2018.
3. L. Kou, Y. Ma, Z. Sun, T. Heine, C. Chen, Two-Dimensional Topological Insulators: Progress and Prospects,J. Phys. Chem. Lett. 8, 1905, 2017.
4. L. Kou, Y. Ma, C. Tang, Z. Sun, A. Du and C. Chen, Auxetic and Ferroelastic Borophane: A Novel 2D Material with Negative Possion’s Ratio and Switchable Dirac Transport Channels, Nano Lett. 16, 7910, 2016.1. L. Kou, Y. Ma, C. Tang, Z. Sun, A. Du and C. Chen, Auxetic and Ferroelastic Borophane: A Novel 2D Material with Negative Possion’s Ratio and Switchable Dirac Transport Channels, Nano Lett. 16, 7910, 2016
5. L. Kou, B. Yan, F. Hu, S.-C. Wu, T. Wheling, C. Felser, C. Chen and T. Frauenheim, Graphene-Based Topological Insulator with an Intrinsic Bulk Band Gap above Room Temperature Nano Lett. 13, 6251, 2013.
6. L. Kou, C. Li, Z. Zhang and W. Guo, Tuning magnetism in Zigzag ZnO nanoribbons by transverse electric fields,ACS Nano, 4, 2124, 2010.
7. L. Kou, C. Tang, W. Guo and C. Chen, Tunable Magnetism in Strained Graphene with Topological Line Defect, ACS Nano, 5, 1012, 2011.
8. L. Kou, S.-C. Wu, C. Felser, T. Frauenheim, C. Chen and B. Yan, Robust 2D Topological Insulator in van der Waals heterostructures, ACS Nano 8, 10448, 2014.
9. L Kou, T Frauenheim, C Chen, Phosphorene as a Superior Gas Sensor: Selective Adsorption and Distinct I–V Response, J. Phys. Chem. Lett. 6, 2794, 2015
10. L Kou*, C Chen, S. Smith, Phosphene: Fabrication, Properties and Applications, J. Phys. Chem. Lett. 6, 2794, 2015
11. X Han, L Kou, Z Zhang, Z Zhang, X Zhu, J Xu, Z Liao, W Guo, D Yu, Strain‐Gradient Effect on Energy Bands in Bent ZnO Microwires, Adv. Mater., 2012, 24, 4707–4711
12. X. Han, L. Kou, et al. Electronic and Mechanical Coupling in Bent ZnO nanowires, Adv. Mater. 21, 4937, 2009.
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